Manipulating carrier transport in static Schottky MSM structure via mechanical friction

Abstract Expanding the metal–semiconductor–metal (MSM) structure to encompass a broader range of passive networks is crucial for enhancing the understanding of carrier transport theory and broadening its application scope. Here, a mechanism to modulate the Schottky barrier using mechanical friction is proposed to generate electricity. The findings reveal that contact electrification occurs between the MSM structure and the friction medium, leading to charge redistribution within the system and the application of a bias voltage across the Schottky barrier via a conductive bridge. The conductive friction medium, whether liquid or solid, functions analogously to a conventional physical bias in a Schottky barrier diode, enabling the efficient regulation of the carriers. Aligning the electronegativity of the friction medium with that of the MSM structure, in accordance with the triboelectric sequence, enables the Schottky MSM structure to switch between AC and DC outputs, further validating the proposed carrier transport mechanism. Additionally, we showcase a constant generator composed of a parallel diode array to harvest energy from droplets excitation and the generation of a control signal through solid friction. This work advances the theoretical understanding of the Schottky MSM structure driven by mechanical friction and highlights its potential applications in passive networks.