5.5 GHz film bulk acoustic wave filters using thin film transfer process for WLAN applications

Wireless local area network (WLAN) has gained widespread application as a convenient network access method, demanding higher network efficiency, stability, and responsiveness. High-performance filters are crucial components to meet these needs. Film bulk acoustic resonators (FBARs) are ideal for constructing these filters due to their high-quality factor (Q) and low loss. In conventional air-gap type FBAR, aluminum nitride (AlN) is deposited on the sacrificial layer with poor crystallinity. Additionally, FBARs with single-crystal AlN have high internal stress and complicated fabrication process. These limit the development of FBARs to higher frequencies above 5 GHz. This paper presents the design and fabrication of FBARs and filters for WLAN applications, combining the high electromechanical coupling coefficient ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>K</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) of Al<sub>0.8</sub>Sc<sub>0.2</sub>N film with the advantages of the thin film transfer process. An AlN seed layer and 280 nm-thick Al<sub>0.8</sub>Sc<sub>0.2</sub>N are deposited on a Si substrate via physical vapor deposition (PVD), achieving a full width at half maximum (FWHM) of 2.1°. The ultra-thin film is then transferred to another Si substrate by wafer bonding, flipping, and Si removal. Integrating conventional manufacturing processes, an FBAR with a resonant frequency reaching 5.5 GHz is fabricated, demonstrating a large effective electromechanical coupling coefficient ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>eff</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) of 13.8% and an excellent figure of merit (FOM) of 85. A lattice-type filter based on these FBARs is then developed for the Wi-Fi UNII-2 band, featuring a center frequency of 5.5 GHz and a -3 dB bandwidth of 306 MHz, supporting high data rates and large throughputs in WLAN applications.

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Publication Details

Journal
Microsystems & Nanoengineering
Published
2024-11-25
DOI
https://doi.org/10.1038/s41378-024-00820-3
Citations
8
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
1.48

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article

5.5 GHz film bulk acoustic wave filters using thin film transfer process for WLAN applications

Chao Gao, Yao Cai, Cheng Lei, Binghui Lin et al.
8 citations
Microsystems & Nanoengineering
Acoustic Wave Resonator Technologies
1.48
article

5.5 GHz film bulk acoustic wave filters using thin film transfer process for WLAN applications

Chao Gao, Yao Cai, Cheng Lei, Binghui Lin, Yan Liu, Tingting Yang, Chengliang Sun, Yupeng Zheng, Yaxin Wang
article en
8 citations

Abstract

Wireless local area network (WLAN) has gained widespread application as a convenient network access method, demanding higher network efficiency, stability, and responsiveness. High-performance filters are crucial components to meet these needs. Film bulk acoustic resonators (FBARs) are ideal for constructing these filters due to their high-quality factor (Q) and low loss. In conventional air-gap type FBAR, aluminum nitride (AlN) is deposited on the sacrificial layer with poor crystallinity. Additionally, FBARs with single-crystal AlN have high internal stress and complicated fabrication process. These limit the development of FBARs to higher frequencies above 5 GHz. This paper presents the design and fabrication of FBARs and filters for WLAN applications, combining the high electromechanical coupling coefficient ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>K</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) of Al<sub>0.8</sub>Sc<sub>0.2</sub>N film with the advantages of the thin film transfer process. An AlN seed layer and 280 nm-thick Al<sub>0.8</sub>Sc<sub>0.2</sub>N are deposited on a Si substrate via physical vapor deposition (PVD), achieving a full width at half maximum (FWHM) of 2.1°. The ultra-thin film is then transferred to another Si substrate by wafer bonding, flipping, and Si removal. Integrating conventional manufacturing processes, an FBAR with a resonant frequency reaching 5.5 GHz is fabricated, demonstrating a large effective electromechanical coupling coefficient ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>eff</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) of 13.8% and an excellent figure of merit (FOM) of 85. A lattice-type filter based on these FBARs is then developed for the Wi-Fi UNII-2 band, featuring a center frequency of 5.5 GHz and a -3 dB bandwidth of 306 MHz, supporting high data rates and large throughputs in WLAN applications.

Microsystems & NanoengineeringVol. 10(1)
Yangtze University (CN), Wuhan University of Technology (CN), Wuhan University (CN), Yangtze Optical Electronic (China) (CN)
National Natural Science Foundation of China, Wuhan University, Natural Science Foundation for Young Scientists of Shanxi Province, Young Scientists Fund, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 19%
Acoustic Wave Resonator Technologies
1.48
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