5.5 GHz film bulk acoustic wave filters using thin film transfer process for WLAN applications
Wireless local area network (WLAN) has gained widespread application as a convenient network access method, demanding higher network efficiency, stability, and responsiveness. High-performance filters are crucial components to meet these needs. Film bulk acoustic resonators (FBARs) are ideal for constructing these filters due to their high-quality factor (Q) and low loss. In conventional air-gap type FBAR, aluminum nitride (AlN) is deposited on the sacrificial layer with poor crystallinity. Additionally, FBARs with single-crystal AlN have high internal stress and complicated fabrication process. These limit the development of FBARs to higher frequencies above 5 GHz. This paper presents the design and fabrication of FBARs and filters for WLAN applications, combining the high electromechanical coupling coefficient ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>K</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) of Al<sub>0.8</sub>Sc<sub>0.2</sub>N film with the advantages of the thin film transfer process. An AlN seed layer and 280 nm-thick Al<sub>0.8</sub>Sc<sub>0.2</sub>N are deposited on a Si substrate via physical vapor deposition (PVD), achieving a full width at half maximum (FWHM) of 2.1°. The ultra-thin film is then transferred to another Si substrate by wafer bonding, flipping, and Si removal. Integrating conventional manufacturing processes, an FBAR with a resonant frequency reaching 5.5 GHz is fabricated, demonstrating a large effective electromechanical coupling coefficient ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>eff</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) of 13.8% and an excellent figure of merit (FOM) of 85. A lattice-type filter based on these FBARs is then developed for the Wi-Fi UNII-2 band, featuring a center frequency of 5.5 GHz and a -3 dB bandwidth of 306 MHz, supporting high data rates and large throughputs in WLAN applications.
Authors
- Chao Gao (ORCID: https://orcid.org/0000-0002-5170-3705)
- Yao Cai (ORCID: https://orcid.org/0000-0003-0555-5745)
- Cheng Lei (ORCID: https://orcid.org/0000-0001-8439-4235)
- Binghui Lin (ORCID: https://orcid.org/0000-0002-6292-4773)
- Yan Liu (ORCID: https://orcid.org/0000-0002-6251-7123)
- Tingting Yang (ORCID: https://orcid.org/0000-0002-3623-7080)
- Chengliang Sun
- Yupeng Zheng (ORCID: https://orcid.org/0000-0002-3351-5161)
- Yaxin Wang (ORCID: https://orcid.org/0009-0000-2289-8526)
Institutions
- Yangtze University (CN)
- Wuhan University of Technology (CN)
- Wuhan University (CN)
- Yangtze Optical Electronic (China) (CN)
Publication Details
- Journal
- Microsystems & Nanoengineering
- Published
- 2024-11-25
- DOI
- https://doi.org/10.1038/s41378-024-00820-3
- Citations
- 8
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.48
Funders
- National Natural Science Foundation of China
- Wuhan University
- Natural Science Foundation for Young Scientists of Shanxi Province
- Young Scientists Fund
- Fundamental Research Funds for the Central Universities