Ferroelectric Perovskite/MoS₂ Channel Heterojunctions for Wide‐Window Nonvolatile Memory and Neuromorphic Computing

Ferroelectric materials commonly serve as gate insulators in typical field-effect transistors, where their polarization reversal enables effective modulation of the conductivity state of the channel material, thereby realizing non-volatile memory. Currently, novel 2D ferroelectrics unlock new prospects in next-generation electronics and neuromorphic computation. However, the advancement of these materials is impeded by limited selectivity and narrow memory windows. Here, new concepts of 2D ferroelectric perovskite/MoS₂ channel heterostructures field-effect transistors are presented, in which 2D ferroelectric perovskite features customizable band structure, few-layered ferroelectricity, and submillimeter-size monolayer wafers. Further studies reveal that these devices exhibit unique charge polarity modulation (from n- to p-type channel) and remarkable nonvolatile memory behavior, especially record-wide hysteresis windows up to 177 V, which enables efficient imitation of biological synapses and achieves high recognition accuracy for electrocardiogram patterns. This result provides a device paradigm for future nonvolatile memory and artificial synaptic applications.