A comparison of formulations and non-linear solvers for computational modelling of semiconductor devices
The drift-diffusion formulation, modelling semiconductor materials in terms of carrier densities and electric potential, is considered together with an alternative formulation in terms of dimensionless logarithmic quantities. Stability of both formulations in presence of sharp variations with a Galerkin Finite Element discretisation is assessed in two realistic problems: a <i>p</i>-<i>n</i> junction and an <i>n</i>-MOSFET device. The robustness with respect to the initial guess and the computational efficiency of the Newton-Raphson and Gummel non-linear solvers are also compared.
Authors
- Sonia Fernández‐Méndez (ORCID: https://orcid.org/0000-0002-9305-7684)
- Irene Arias (ORCID: https://orcid.org/0000-0002-6761-3499)
- David Codony (ORCID: https://orcid.org/0000-0002-7341-9799)
- Sergi Pérez-Escudero (ORCID: https://orcid.org/0009-0005-6205-4260)
Institutions
- International Center for Numerical Methods in Engineering (ES)
- Universitat Politècnica de Catalunya (ES)
Publication Details
- Journal
- Computational Mechanics
- Published
- 2024-11-23
- DOI
- https://doi.org/10.1007/s00466-024-02578-x
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Generalitat de Catalunya
- Ministerio de Economía y Competitividad
- Agència de Gestió d'Ajuts Universitaris i de Recerca
- Agencia Estatal de Investigación