Non-Fourier thermal spike effect on nanocrystalline Cu phase engineering

• A non-Fourier model is proposed to investigate thermal spike effect in ion beam sputter deposition. • The proposed thermal spike theory well explains the non-Gaussian temperature profiles. • The beam kinetic energy plays a significant role in the formation of high temperature/stress shocks. • A high-stress field promotes nanocrystalline Cu amorphization at a threshold of ~ 4 GPa. The thermal spike effect dominates rapid heating and quenching at the nanoscale in ion beam assisted materials surface phase engineering. This phenomenon often leads to the formation of metastable nanocrystalline phases in the resulting micro-/nanostructures. However, such a non-equilibrium process cannot be accurately described by the conventional Fourier thermal spike model. In this study, a non-Fourier model is proposed to elucidate the dynamics of heat diffusion in sub-keV Cu ion beam sputter deposition. The effects of beam density and energy on the non-equilibrium thermal and stress fields are quantitatively investigated. The influence of high stress field on nanocrystalline Cu phase content is also studied. It is found that the energetic Cu ion beams produce a rapidly oscillating stress field with a maximum of ∼ 10 GPa within 50 ps, which significantly constrains the growth of nanocrystalline Cu phase at a threshold of ∼ 4 GPa. This understanding provides new insights into the formation of metastable nanocrystalline phases in the fabrication and modification of surface micro-/nanostructures using ion beam assisted techniques.