The Future of Successful Integration with Two-Dimensional Field-Effect Transistors: Materials, Opportunities, and Challenges

This paper reviews the structures and characteristics of field-effect transistors utilizing two-dimensional materials as channels (2D-FETs), from its major problems to solutions when they are integrated with high-k materials.In particular, the device characteristics of widely studied 2D materials, such as graphene and transition metal dichalcogenides (TMDs), will be discussed, and the problems when applying them are also introduced.In addition, it will highlight the importance of integration of high-k dielectric insulators in top and bottom gate structures.Finally, we address the prospects of atomic layer deposition (ALD) on 2D materials to realize an ideal 2D-FETs and its potential as next-generation electronic devices.