High-Quality Hexagonal Boron Nitride Selectively Grown on Patterned Epigraphene by MOVPE
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal–organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene’s nonwetting properties, h-BN growth starts preferentially from the graphene ledges. We use this fact here to selectively promote the growth of high-quality flat h-BN on epigraphene by patterning epigraphene microstructures prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show a smooth and pleated surface morphology on epigraphene, whereas crumpled BN is observed on the SiC. Cross-sectional high-resolution transmission electron microscopy images and fluorescence imaging confirm the higher BN quality grown on the epigraphene. Transport measurements reveal p-doping, as expected from hydrogen intercalation of epigraphene and regions of high and low mobility. This method can be used to produce structurally uniform high-quality h-BN/epigraphene micro/nanoscale heterostructures.
Authors
- Amira Bencherif
- Jean‐Paul Salvestrini (ORCID: https://orcid.org/0000-0002-0482-1178)
- Walt A. de Heer (ORCID: https://orcid.org/0009-0003-0670-9387)
- Frédéric Fossard (ORCID: https://orcid.org/0000-0002-7886-5309)
- Carolyn L. Beck (ORCID: https://orcid.org/0000-0003-4880-6380)
- Vishnu Ottapilakkal (ORCID: https://orcid.org/0000-0002-4907-759X)
- Jean‐Sébastien Mérot
- Paul L. Voss (ORCID: https://orcid.org/0000-0002-3127-4085)
- A. Ougazzaden (ORCID: https://orcid.org/0000-0002-9959-5280)
- Phuong Vuong (ORCID: https://orcid.org/0000-0003-2775-7081)
- Abhishek Juyal (ORCID: https://orcid.org/0000-0002-7580-7429)
- Thomas Kauffmann (ORCID: https://orcid.org/0000-0002-0621-2624)
- Annick Loiseau (ORCID: https://orcid.org/0000-0002-1042-5876)
- Noel Dudeck
- Suresh Sundaram (ORCID: https://orcid.org/0000-0003-3194-2730)
- D. Chapron (ORCID: https://orcid.org/0000-0002-0738-6626)
- Claire Berger (ORCID: https://orcid.org/0000-0001-8341-2331)
Institutions
- Georgia Tech Lorraine (FR)
- Centre National de la Recherche Scientifique (FR)
- Georgia Institute of Technology (US)
- Université Paris-Saclay (FR)
- Office National d'Études et de Recherches Aérospatiales (FR)
- CentraleSupélec (FR)
- Laboratoire d'Étude des Microstructures (FR)
- Laboratoire Matériaux Optiques, Photonique et Systèmes (FR)
- Université de Lorraine (FR)
Publication Details
- Journal
- Crystal Growth & Design
- Published
- 2024-11-23
- DOI
- https://doi.org/10.1021/acs.cgd.4c01129
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Graphene Flagship
- European Commission
- Agence Nationale de la Recherche
- H2020 Future and Emerging Technologies