In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy

The formation of InGaAs/GaAs quantum dots by molecular beam epitaxy is studied under the effect of Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, lowering the temperature of the formation of quantum dots by about 50°C.

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Publication Details

Journal
Bulletin of the Lebedev Physics Institute
Published
2024-10-01
DOI
https://doi.org/10.3103/s1068335624600748
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.34
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article

In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy

И. П. Казаков
1 citations
Bulletin of the Lebedev Physics Institute
Semiconductor Quantum Structures and Devices
0.34
article

In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy

И. П. Казаков
article en
1 citations

Abstract

The formation of InGaAs/GaAs quantum dots by molecular beam epitaxy is studied under the effect of Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, lowering the temperature of the formation of quantum dots by about 50°C.

Bulletin of the Lebedev Physics InstituteVol. 51(10)
P.N. Lebedev Physical Institute of the Russian Academy of Sciences (RU)
Openalex Percentile: Top 38%
Semiconductor Quantum Structures and Devices
0.34
DOISourceOpenAlex
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In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy — И. П. Казаков · Bulletin of the Lebedev Physics Institute (2024) | TGRS Research Map | TGRS