Impact Analysis of Control Frequency Variations Using SI MOSFETs and SIC IGBTs in Boost Converter
This article aims to conduct a comparative study between different types of MOSFETs based on silicon (Si) and IGBTs based on silicon carbide (SiC). Specifically, three MOSFETs (IRF530, IRF630, IRF730) and one IGBT (APT25GF100BN) were analyzed. The study evaluates characteristics such as V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> and V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</inf> voltages, current during transistor turn-on and turn-off, and examines the impact of varying the frequency of the control signal. Transient process data during activation and deactivation were simulated using LTspice software. The analysis focused on their application in a static boost converter to determine conducted emissions in common mode and differential mode. Results indicate that the choice of MOSFET and the switching frequency significantly influence electromagnetic interference (EMI) noise levels.
Authors
- Abdelhakim Zeghoudi (ORCID: https://orcid.org/0000-0002-9608-3925)
- Abdelber Bendaoud (ORCID: https://orcid.org/0000-0002-4502-4415)
- Dorin Dumitru Lucache (ORCID: https://orcid.org/0000-0002-6060-117X)
- Laurent Canale (ORCID: https://orcid.org/0000-0003-1097-889X)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Gheorghe Asachi Technical University of Iași (RO)
- Laboratoire Plasma et Conversion d'Energie (FR)
- Université Djilali de Sidi Bel Abbès (DZ)
Publication Details
- Published
- 2024-10-17
- DOI
- https://doi.org/10.1109/epei63510.2024.10758091
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00