Robust single modified divacancy color centers in 4H-SiC under resonant excitation
Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 h). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these color centers compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing quantum networking.
Authors
- Jian‐Shun Tang (ORCID: https://orcid.org/0000-0002-2191-8350)
- Jin‐Shi Xu (ORCID: https://orcid.org/0000-0003-0528-1000)
- Zhi-He Hao
- Junfeng Wang (ORCID: https://orcid.org/0000-0002-5720-056X)
- Chuan‐Feng Li (ORCID: https://orcid.org/0000-0001-6815-8929)
- Lixing You (ORCID: https://orcid.org/0000-0001-7304-0474)
- Guang-Can Guo
- Xiaolei Wen (ORCID: https://orcid.org/0000-0003-3882-8586)
- Zhen-Xuan He
- Hao Li (ORCID: https://orcid.org/0000-0001-6946-4362)
- Feng Zhang (ORCID: https://orcid.org/0000-0002-1163-2498)
- Qiang Li (ORCID: https://orcid.org/0000-0001-5681-3359)
- Wei Liu (ORCID: https://orcid.org/0000-0003-0776-8998)
- Ruijun Zhang (ORCID: https://orcid.org/0000-0002-0559-056X)
- Wu-Xi Lin (ORCID: https://orcid.org/0000-0002-6048-2270)
- Shuo Ren
- Rui-Jian Liang (ORCID: https://orcid.org/0009-0001-1461-7322)
- Ji-Yang Zhou (ORCID: https://orcid.org/0009-0004-8382-9742)
Institutions
- University of Science and Technology of China (CN)
- Anhui University (CN)
- Hefei University of Technology (CN)
- Xiamen University (CN)
- Chinese Academy of Sciences (CN)
- Sichuan University (CN)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
- Quantum Design (Germany) (DE)
- QuantumCTek (China) (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
- Zhejiang University (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2024-11-22
- DOI
- https://doi.org/10.1038/s41467-024-53662-y
- Citations
- 21
- Primary Topic
- Diamond and Carbon-based Materials Research
- Type
- article
- Field-Weighted Citation Impact
- 2.46
Funders
- National Natural Science Foundation of China
- University of Science and Technology of China