Doped-δ-doped transferred electron device for sustained terahertz signal generation

Abstract The performance of a novel transferred electron device structure aimed at sustaining high-frequency signals in the terahertz (THz) range is investigated. The device uses a highly doped δ -layer to split the n -doped device into two distinct regions, forming a doped- δ -doped configuration. The first region generates high-speed electrons toward the δ -layer, while the second region utilizes negative differential resistance to modulate electron speeds and sustain oscillations. An ensemble self-consistent Monte Carlo model is employed to analyze electron dynamics and THz signal generation in this structure under a constant bias. The design demonstrates superior performance, achieving a fundamental operating frequency of 427 GHz in a 600 nm length InP device, nearly a 50% increase over conventional notch-doped design, while maintaining the current harmonic amplitude. This design achieves higher frequencies without reducing device length and increasing doping density, effectively addressing the trade-off of the Kroemer criterion. The study of the effects of varying doping densities and region lengths on device performance, highlighting the importance of optimizing these parameters to sustain current oscillations and efficiently generate THz signals. This design offers a promising solution for a compact and efficient THz source.