Analysis of trapping effects on DC and RF performance in double Π-gate Al_0.3Ga_0.7N/GaN MOSHEMTs

Abstract This study investigates trap analysis of the DC and RF performance of Al 0.3 Ga 0.7 N/GaN Metal-Oxide-Semiconductor high electron mobility transistor (MOSHEMT) with double π -gate technology. The motivation behind double π -gate technology is to evenly distribute the peak electric field and reduce hot electron generation. This gate design helps to lower hot-electron generation across various operating conditions while maintaining device performance, particularly in the lower millimeter-wave frequency range. High dielectric constant HfO 2 is used as gate oxide, which helps to lower the gate leakage current. Near the conduction band (CB), the electron quasi-fermi level of 30 meV is achieved. The practical application of HfO 2 in AlGaN/GaN HEMTs is limited by its high oxygen permeability, brittleness, and reactivity with moisture and CO 2 , which can cause mechanical stress and form hafnium carbonate, adversely affecting device performance. Future designs of the double- π gate structure could enhance electrostatic control, reduce short-channel effects, and improve high-frequency performance by scaling down gate dimensions and using high-k or novel dielectric materials. Additionally, optimization for mm-wave and THz applications would help to maintain electron mobility and minimize parasitic capacitance and resistance.