Anisotropic Etching of Monolayer MoS<sub>2</sub> Flakes for Zigzag Edges in Chemical Vapor Deposition
The edge of two-dimensional (2D) flakes of transition metal dichalcogenide (TMD) profoundly influences their optical, electronic, catalytic, and magnetic properties due to the asymmetric atomic configurations on the edge. As a reverse process of growth, the etching of monolayer MoS<sub>2</sub> flakes can be modulated by tuning the sulfur stoichiometric ratio in chemical vapor deposition. Here, we report studies of the high-density formation of etched pores with defined orientations on MoS<sub>2</sub> flakes. Structural analysis reveals that these pores are bound by zigzag edges. Our measurements show that the saturation magnetization of etched MoS<sub>2</sub> flakes can be up to five times higher than that of unetched counterparts, indicating that increased zigzag edge density enhances the ferromagnetism of MoS<sub>2</sub> flakes. These observations provide valuable insights for tailoring the edge density of 2D TMD flakes to optimize properties for targeted applications.
Authors
- Di Wu (ORCID: https://orcid.org/0000-0003-3619-1411)
- Bowen Zheng (ORCID: https://orcid.org/0000-0002-7252-962X)
- Qingxuan Li (ORCID: https://orcid.org/0000-0001-5163-7958)
- Mu Wang (ORCID: https://orcid.org/0000-0002-3823-1272)
- Ru‐Wen Peng (ORCID: https://orcid.org/0000-0003-0424-2771)
- Qunyong Luo
- Fei Chen (ORCID: https://orcid.org/0000-0002-8442-6134)
- Liqi Zhou (ORCID: https://orcid.org/0000-0002-6498-4518)
- Yi Zhu (ORCID: https://orcid.org/0009-0007-8142-7063)
Institutions
- Shanghai University (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Nanjing University (CN)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2024-11-22
- DOI
- https://doi.org/10.1021/acsami.4c19420
- Citations
- 4
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.47
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China