Theoretical and Experimental Study of Resistive Thin Film for Application in Resistive Wall Amplifiers
In this paper, the electrical characteristics of resistive thin films and the amplification properties of resistive wall amplifiers are studied based on large signal theory. To optimize amplification performance and reduce interaction length, different frequency bands and operating voltages require films with different electrical properties and thicknesses and a reasonable distribution of the respective lengths of the resistive walls and slow-wave structures. To obtain ZnOx thin films with the required conductivities and thicknesses, reactive DC magnetron sputtering was employed. By controlling the partial pressure of oxygen and the annealing temperature during the preparation process, it is possible to control the number of oxygen deficiencies in the material and the quality of crystallization, which significantly influence the electrical properties. The experiments provide a parameter reference for the preparation of resistive films for millimeter-wave frequency band resistive wall amplifiers.
Authors
- Jin Xu (ORCID: https://orcid.org/0000-0001-6877-9768)
- Yongsheng Xu (ORCID: https://orcid.org/0000-0002-5064-9284)
- Pengcheng Yin (ORCID: https://orcid.org/0000-0002-3423-8426)
- Hairong Yin (ORCID: https://orcid.org/0000-0001-7853-1790)
- Jinchi Cai (ORCID: https://orcid.org/0000-0001-9328-0053)
- Lingna Yue (ORCID: https://orcid.org/0000-0002-5712-4552)
- Yue Ouyang (ORCID: https://orcid.org/0009-0005-2220-1553)
- Jun He (ORCID: https://orcid.org/0000-0003-3298-6700)
- Dongdong Jia (ORCID: https://orcid.org/0000-0001-6970-7993)
- Hailong Wang
- Wenxiang Wang (ORCID: https://orcid.org/0000-0002-8952-960X)
- Wuyang Fan (ORCID: https://orcid.org/0009-0007-6132-4657)
- Yanyu Wei
Institutions
- University of Electronic Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Aerospace Information Research Institute (CN)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2024-11-22
- DOI
- https://doi.org/10.1021/acsaelm.4c01486
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Laboratory Foundation of China
- National Postdoctoral Program for Innovative Talents