Quantum spin Hall states in MX<sub>2</sub> (M = Ru, Os; X = As, Sb) monolayers
The quantum spin Hall (QSH) effect has attracted extensive research interest due to its great promise in topological quantum computing and novel low-energy electronic devices. Here, using first-principles calculations, we find that MX<sub>2</sub> (M = Ru and Os; X = As and Sb) monolayers are 2D topological insulators (TIs). The spin-orbit coupling (SOC) band gaps for RuAs<sub>2</sub>, RuSb<sub>2</sub>, OsAs<sub>2</sub>, and OsSb<sub>2</sub> monolayers are predicted to be 80, 131, 118, and 221 meV, respectively. Additionally, the nontrivial topological states are further confirmed by calculating the topological invariant and the appearance of gapless edge states. More interestingly, for RuSb<sub>2</sub> and OsSb<sub>2</sub> monolayers, the position of node points in energy can be effectively tuned by applying in-plane strain. Our results consistently indicate that all MX<sub>2</sub> monolayers can serve as an effective platform for achieving the room-temperature QSH effect.
Authors
- Jun Zhang (ORCID: https://orcid.org/0000-0002-9980-9074)
- Yongjin Hu
- Dong-Yan Lv
- Mingsen Deng (ORCID: https://orcid.org/0000-0002-3331-3850)
- Qin Zhang (ORCID: https://orcid.org/0000-0002-8379-7259)
- Zhi He (ORCID: https://orcid.org/0000-0001-9568-7076)
- Yong‐Chen Xiong (ORCID: https://orcid.org/0000-0002-8904-1292)
- Tao Jing (ORCID: https://orcid.org/0000-0003-4785-0988)
- Dongmei Liang (ORCID: https://orcid.org/0000-0003-3100-7574)
Institutions
- Guizhou University of Finance and Economics (CN)
- Guizhou University (CN)
- Hubei University of Automotive Technology (CN)
Publication Details
- Journal
- Physical Chemistry Chemical Physics
- Published
- 2024-11-22
- DOI
- https://doi.org/10.1039/d4cp04025b
- Citations
- 1
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.12