Terahertz‐Induced Resistance Oscillations in MgZnO/ZnO Heterostructures

Herein, a theoretical work is presented on the radiation‐induced magnetoresistance oscillations in MgZnO/ZnO heterostructures in the terahertz (THz) band. It is demonstrated that the photo‐oscillations are much better observed in that band in contrast with microwaves where a reduced number of oscillations are obtained, as experiments show. In fact the large effective mass of electrons in this material makes terahertz the more suitable to be used in this kind experiments. For the simulations obtained here, the radiation‐driven electron orbit model is used. Thus, it is shown that all photo‐oscillations present the main features of the well‐known microwave‐induced resistance oscillations where one wants to stand out that with MgZnO/ZnO they present the shift of 1/4 of the cycle. The frequency and power dependence obtaining the same behavior as photo‐oscillations, based on microwaves, are also studied.