Cryogenic threshold voltage and on-current variability comparative analysis of same-fab 65 nm bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Abstract In this study, the current and threshold voltage variability for fully depleted silicon-on-insulator (FDSOI) and bulk field-effect transistors (FETs) that are prepared at the same fab using the same process are analyzed and compared at cryogenic temperature (CT) and RT. It is found that FDSOI shows more variability at CT, especially in the linear region. However, FDSOI still has smaller variability compared to bulk FETs, including a smaller drain-induced barrier lowering value. It is also found that the limited random dopant fluctuation (RDF) in FDSOI makes the impact from other variability sources more obvious, while the variability in bulk is more shadowed by RDF. The origins of such phenomena are discussed.