Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon
A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh<sup>-1</sup>. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.
Authors
- Feng Shi (ORCID: https://orcid.org/0000-0001-5350-0365)
- Qun Hao (ORCID: https://orcid.org/0000-0002-9819-731X)
- Xing Peng (ORCID: https://orcid.org/0000-0002-6177-3715)
- Shanshan Wang (ORCID: https://orcid.org/0000-0001-6521-207X)
- Jiancheng Xie (ORCID: https://orcid.org/0000-0001-8828-3938)
Institutions
- Changchun University of Science and Technology (CN)
- Beijing Institute of Technology (CN)
- National University of Defense Technology (CN)
- Science and Technology on Surface Physics and Chemistry Laboratory (CN)
Publication Details
- Journal
- Nanomaterials
- Published
- 2024-11-21
- DOI
- https://doi.org/10.3390/nano14231866
- Citations
- 3
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.55
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China