Review—Development of Graphene-based Photodiode Device: Synthesis, Deposition, and Characterization

Graphene, a two-dimensional material with exceptional electrical, optical, and mechanical properties, have positioned it as a promising material for photodiode applications. This review delves into the development of graphene materials, emphasizing synthesis, deposition techniques, and characterization. Deposition methods, including spin-coating and direct growth, are evaluated for their scalability and integration capabilities. The synthesis of graphene through methods such as chemical vapor deposition (CVD), exfoliation, and reduction of graphene oxide is discussed, with a focus on optimizing material quality for photodiode applications. Deposition techniques, including drop-casting, spray coating and spin coating method on substrates, are evaluated for their impact on device performance and scalability. Key characterization techniques are highlighted for assessing graphene's structural integrity, and optical properties, photodiode efficiency. The integration of graphene with other materials, such as semiconductors and dielectrics, is reported to enhance device sensitivity, responsivity, and operational stability. Finally, A hybrid heterojunction device with graphene material emphasizes the critical role of the hole transport layer is addressed in this review.