Investigation of total ionizing dose effects on SOI FinFETs at elevated temperatures

Abstract The synergistic effects of total ionization dose (TID) and high temperature (HT) are investigated for n-type Silicon-on-Insulator (n-SOI) FinFETs. Experimental results reveal that both HT and TID will lead to a negative shift in threshold voltage (Δ V TH ) in n-SOI FinFETs. While the Δ V TH induced by the synergistic effects is smaller than the sum of the Δ V TH shifts caused by TID and HT effects individually. Theoretical analysis suggests that the weaken degradation phenomenon can be attributed to the decrease of shallow-level electron traps in the HfO 2 layer of stacked gate oxide. Based on this analysis, an analytical model is developed to simulate the synergistic effects of TID and HT, which has been validated by both experimental results and TCAD simulations. The proposed model enables accurate prediction of the potential distribution within the fin, allowing for precise calculation of V TH variations under HT and TID irradiation.