New Concept for the Development of High-Performance X-ray Lithography

A brief overview is given of the current state of extreme ultraviolet (EUV) or X-ray lithography at a wavelength of 13.5 nm in the world. The problems and prospects for the development of this technology in the next few years are discussed. A new concept of X-ray lithography, developed at the Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS), is reported. The advantages and prospects for the feasibility of lithography at a new wavelength of 11.2 nm for lithography are justified. A brief overview of the domestic level of development of the critical technologies required to create an X-ray lithograph is given.