<i>In situ</i> hydrogen doping of titanium dioxide <i>via</i> PAALD for enhanced MIM diode performance in high-frequency applications

Metal–insulator–metal (MIM) diodes based on black titanium dioxide are fabricated and characterized for the first time by in situ hydrogen doping via plasma assisted atomic layer deposition (PAALD).

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2024-11-21
DOI
https://doi.org/10.1039/d4tc04152f
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.21
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article

In situ hydrogen doping of titanium dioxide via PAALD for enhanced MIM diode performance in high-frequency applications

Michal Bajcsy, George Shaker, Bersu Baştuğ Azer, Mustafa Yavuz et al.
1 citations
Journal of Materials Chemistry C
Semiconductor materials and devices
0.21
article

In situ hydrogen doping of titanium dioxide via PAALD for enhanced MIM diode performance in high-frequency applications

Michal Bajcsy, George Shaker, Bersu Baştuğ Azer, Mustafa Yavuz, Ahmet Gülsaran, Michael A. Pope, Dogu Ozyigit
article en
1 citations

Abstract

Metal–insulator–metal (MIM) diodes based on black titanium dioxide are fabricated and characterized for the first time by in situ hydrogen doping via plasma assisted atomic layer deposition (PAALD).

Journal of Materials Chemistry CVol. 13(7)
University of Waterloo (CA)
Openalex Percentile: Top 46%
Semiconductor materials and devices
0.21
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<i>In situ</i> hydrogen doping of titanium dioxide <i>via</i> PAALD for enhanced MIM diode performance in high-frequency applications — Michal Bajcsy, George Shaker, et al. · Journal of Materials Chemistry C (2024) | TGRS Research Map | TGRS