Efficient intraband radiative recombination in Bi-doped Si nanocrystals

Abstract It is shown theoretically that sufficiently strong short-range potential of a donor in combination with the effect of quantum confinement is capable of creating great splitting of the energy levels in the conduction band of small Si nanocrystals with a Bi atom. Consequently, radiative transitions between the split levels can generate photons of the near-infrared and, even, visible ranges. Typical rates of these intraband transitions are of the order of 10 7 s −1 , which allows one to hope for high efficiency of possible luminescence in the system.

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Publication Details

Journal
Europhysics Letters (EPL)
Published
2024-11-21
DOI
https://doi.org/10.1209/0295-5075/ad95b7
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
0.00

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article

Efficient intraband radiative recombination in Bi-doped Si nanocrystals

С. В. Фомичев, В. А. Бурдов, G. M. Maksimova
Europhysics Letters (EPL)
Silicon Nanostructures and Photoluminescence
article

Efficient intraband radiative recombination in Bi-doped Si nanocrystals

С. В. Фомичев, В. А. Бурдов, G. M. Maksimova
article en

Abstract

Abstract It is shown theoretically that sufficiently strong short-range potential of a donor in combination with the effect of quantum confinement is capable of creating great splitting of the energy levels in the conduction band of small Si nanocrystals with a Bi atom. Consequently, radiative transitions between the split levels can generate photons of the near-infrared and, even, visible ranges. Typical rates of these intraband transitions are of the order of 10 7 s −1 , which allows one to hope for high efficiency of possible luminescence in the system.

Europhysics Letters (EPL)Vol. 148(5)
N. I. Lobachevsky State University of Nizhny Novgorod (RU)
Russian Science Foundation
Openalex Percentile: Top 87%
Silicon Nanostructures and Photoluminescence
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