Molecular beam epitaxial In2Te3 electronic devices

Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In 2 Te 3 grown on hexagonal boron nitride ( h -BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In 2 Te 3 . Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In 2 Te 3 and h -BN substrates. Compared with the previously reported In 2 Te 3 FETs, the MBE-grown In 2 Te 3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm 2 V −1 s −1 , a subthreshold swing close to 6 V dec −1 , and an impressive on/off ratio of approximately 10 5 . Furthermore, the Ti/In 2 Te 3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV.