Optimization of TSV Array Based on Mathematical Model for HBM3

In this paper, we present a novel approach to optimize the through-silicon vias (TSV) structure by the multi-conductor transmission line (MTL) theory and a genetic algorithm (GA) for high bandwidth memory (HBM). A comprehensive mathematical model is developed for the TSV array based on MTL theory. The S-parameter estimated by the model is consistent with the full-wave simulated results. Moreover, GA, which iteratively adjusts the TSV parameters, is employed to minimize the insertion loss. The results demonstrate significant improvements in TSV performance, including reduced signal degradation and enhanced overall efficiency.