Design and Analysis of High-Density Silicon Interposer Channel and Power Distribution Network

This paper presents a design guide for silicon inter-poser channels and power distribution networks (PDN) in post-HBM3 high-density 1/0 implementations. We introduce a novel reference-paired shielding (RPS) scheme that mitigates crosstalk and reduces metal layer count. Our optimal RPS pattern, which takes into account crosstalk, simultaneous switching noise (SSN), and redistribution layer effects, achieves a maximum datarate of 7.1 Gbps for high-density 1/0 implementation. This represents a 31.5% improvement over conventional interposer channels while using one fewer metal layer. We also analyze the trade-off between 1/0 channel and PDN allocation within a limited interposer area, examining crosstalk and SSN effects relative to channel dimensions and PDN area.

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Publication Details

Published
2024-10-06
DOI
https://doi.org/10.1109/epeps61853.2024.10753865
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21
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Design and Analysis of High-Density Silicon Interposer Channel and Power Distribution Network

Keeyoung Son, Hyunah Park, Hyunsik Kim, Joonsang Park et al.
1 citations
Semiconductor Lasers and Optical Devices
0.21
article

Design and Analysis of High-Density Silicon Interposer Channel and Power Distribution Network

Keeyoung Son, Hyunah Park, Hyunsik Kim, Joonsang Park, Haeyeon Kim, Joungho Kim, Taeil Bae, Haekang Jung
article en
1 citations

Abstract

This paper presents a design guide for silicon inter-poser channels and power distribution networks (PDN) in post-HBM3 high-density 1/0 implementations. We introduce a novel reference-paired shielding (RPS) scheme that mitigates crosstalk and reduces metal layer count. Our optimal RPS pattern, which takes into account crosstalk, simultaneous switching noise (SSN), and redistribution layer effects, achieves a maximum datarate of 7.1 Gbps for high-density 1/0 implementation. This represents a 31.5% improvement over conventional interposer channels while using one fewer metal layer. We also analyze the trade-off between 1/0 channel and PDN allocation within a limited interposer area, examining crosstalk and SSN effects relative to channel dimensions and PDN area.

Korea Advanced Institute of Science and Technology (KR), SK Group (Japan) (JP)
Affordable and clean energy
Openalex Percentile: Top 46%
Semiconductor Lasers and Optical Devices
0.21
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Design and Analysis of High-Density Silicon Interposer Channel and Power Distribution Network — Keeyoung Son, Hyunah Park, et al. · (2024) | TGRS Research Map | TGRS