Design and Analysis of High-Density Silicon Interposer Channel and Power Distribution Network
This paper presents a design guide for silicon inter-poser channels and power distribution networks (PDN) in post-HBM3 high-density 1/0 implementations. We introduce a novel reference-paired shielding (RPS) scheme that mitigates crosstalk and reduces metal layer count. Our optimal RPS pattern, which takes into account crosstalk, simultaneous switching noise (SSN), and redistribution layer effects, achieves a maximum datarate of 7.1 Gbps for high-density 1/0 implementation. This represents a 31.5% improvement over conventional interposer channels while using one fewer metal layer. We also analyze the trade-off between 1/0 channel and PDN allocation within a limited interposer area, examining crosstalk and SSN effects relative to channel dimensions and PDN area.
Authors
- Keeyoung Son (ORCID: https://orcid.org/0000-0003-3019-3678)
- Hyunah Park
- Hyunsik Kim (ORCID: https://orcid.org/0009-0003-9766-067X)
- Joonsang Park
- Haeyeon Kim (ORCID: https://orcid.org/0009-0007-9496-4036)
- Joungho Kim
- Taeil Bae
- Haekang Jung
Institutions
- Korea Advanced Institute of Science and Technology (KR)
- SK Group (Japan) (JP)
Publication Details
- Published
- 2024-10-06
- DOI
- https://doi.org/10.1109/epeps61853.2024.10753865
- Citations
- 1
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21