Latency Insertion Method for Fast Electro-Thermal Simulation of FinFET with Self-Heating Effect

Self-heating effect (SHE) is prominent for FinFET devices due to their large currents and compact sizes. With SHE, the power in FinFETs is dissipated into heat, affecting device performance. Thus, fast and accurate electro-thermal analysis of FinFETs incorporating SHE is important. This paper proposes the Latency Insertion Method (LIM) algorithm for fast FinFET electro-thermal simulation with SHE. Based on the BSIM-CMG model, the proposed method leapfrogs between the conventional electrical LIM algorithm and the thermal equations. The LIM results are compared to SPICE-based commercial software to prove the accuracy and the speed.