Mechanisms of Transport and Field Emission of Electrons in 2D Noncrystalline Carbon Heterostructures with a Quantum Barrier

The influence of the width of the quantum barrier (QB) in the form of a tunnel-thin carbon layer depleted of charge carriers in an enriched noncrystalline carbon matrix on the dissipative-free transport and field emission of electrons is studied. It is shown that the nonlinearities of transverse currents in heterostructures under static low-field electrical influences and the parameters of the current-voltage characteristics of the field emission of electrons in strong pulsed electric fields of a microsecond duration are determined by the parameters of the QB and the implementation of resonant tunneling conditions with the participation of various zero levels of size quantization energy.

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Publication Details

Journal
Russian Microelectronics
Published
2024-10-01
DOI
https://doi.org/10.1134/s1063739724600559
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
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article

Mechanisms of Transport and Field Emission of Electrons in 2D Noncrystalline Carbon Heterostructures with a Quantum Barrier

R. K. Yafarov, V. P. Bokarev, G. Ya. Krasnikov, G. S. Teplov
Russian Microelectronics
Diamond and Carbon-based Materials Research
article

Mechanisms of Transport and Field Emission of Electrons in 2D Noncrystalline Carbon Heterostructures with a Quantum Barrier

R. K. Yafarov, V. P. Bokarev, G. Ya. Krasnikov, G. S. Teplov
article en

Abstract

The influence of the width of the quantum barrier (QB) in the form of a tunnel-thin carbon layer depleted of charge carriers in an enriched noncrystalline carbon matrix on the dissipative-free transport and field emission of electrons is studied. It is shown that the nonlinearities of transverse currents in heterostructures under static low-field electrical influences and the parameters of the current-voltage characteristics of the field emission of electrons in strong pulsed electric fields of a microsecond duration are determined by the parameters of the QB and the implementation of resonant tunneling conditions with the participation of various zero levels of size quantization energy.

Russian MicroelectronicsVol. 53(5)
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (RU), Research Institute of Molecular Electronics (RU)
Openalex Percentile: Top 87%
Diamond and Carbon-based Materials Research
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