Temperature Dependencies of the Breakdown Voltage of a High-Voltage SOI LDMOS Transistor

The results of a study of the temperature dependencies of the breakdown voltage of high-power SOI nLDMOS transistors with a long drift region with topological standards of 0.5 μm are discussed. Our attention is focused on the influence of the mechanism of generation and passivation of traps at the Si/SiO2 interface in strong electric fields. The dependence of the breakdown voltage in the ambient temperature range from –60 to 300°C is analyzed experimentally and theoretically and the temperature range is defined from 25 to 220°C, where the breakdown voltage is almost constant. The possibility of restoring the breakdown voltage level after a long period of rest is considered, which is a prerequisite for extending the service life of the device.