Optimization of carbon transport and growth rates in top-seeded solution growth of Al-doped SiC
The optimal growth conditions for p-type SiC by the TSSG method were explored using machine learning and genetic algorithms. Al evaporation under the optimized conditions was significantly inhibited without compromising the growth rate.
Authors
- Yuanchao Huang (ORCID: https://orcid.org/0000-0001-9992-0955)
- Yanwei Yang (ORCID: https://orcid.org/0009-0004-1706-5350)
- Zhouyu Tong (ORCID: https://orcid.org/0000-0002-4464-2529)
- Xuefeng Han (ORCID: https://orcid.org/0000-0002-9309-0038)
- Xiaodong Pi (ORCID: https://orcid.org/0000-0002-4233-6181)
- Deren Yang (ORCID: https://orcid.org/0000-0002-1745-2105)
- Binjie Xu
Institutions
- Zhejiang University (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2024-11-21
- DOI
- https://doi.org/10.1039/d4ce00931b
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63