Secondary grain boundary dislocations alter segregation energy spectra

Grain boundaries (GBs) trigger structure-specific chemical segregation of solute atoms. According to the three-dimensional (3D) topology of grains, GBs - although defined as two-dimensional defects - cannot practically be free of curvature. This leads to discrete variations in the GB plane orientations. Topologically required arrays of secondary GB dislocations accommodate these variations as well as deviations from ideal coincidence site lattice GBs. We report here that these pattern-forming secondary GB dislocations can have an additional and, in some cases, even a much stronger effect on GB segregation than defect-free GBs. Using nanoscale correlative tomography combining crystallography and chemical analysis, we quantified the relationship between secondary GB dislocations and their segregation energy spectra for a model Fe-W alloy. This discovery unlocks design opportunities for advanced materials, leveraging the additional degrees of freedom provided by topologically-necessary secondary GB dislocations to modulate segregation.

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Publication Details

Journal
Nature Communications
Published
2025-09-25
DOI
https://doi.org/10.1038/s41467-025-64265-6
Citations
4
Primary Topic
Advanced Materials Characterization Techniques
Type
article
Field-Weighted Citation Impact
2.70

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article

Secondary grain boundary dislocations alter segregation energy spectra

Xinren Chen, Dierk Raabe, William Gonçalves, E.F. Rauch et al.
4 citations
Nature Communications
Advanced Materials Characterization Techniques
2.70
article

Secondary grain boundary dislocations alter segregation energy spectra

Xinren Chen, Dierk Raabe, William Gonçalves, E.F. Rauch, Xuyang Zhou, Yipeng Gao, Patrick Harrison, Yi Hu
article en
4 citations

Abstract

Grain boundaries (GBs) trigger structure-specific chemical segregation of solute atoms. According to the three-dimensional (3D) topology of grains, GBs - although defined as two-dimensional defects - cannot practically be free of curvature. This leads to discrete variations in the GB plane orientations. Topologically required arrays of secondary GB dislocations accommodate these variations as well as deviations from ideal coincidence site lattice GBs. We report here that these pattern-forming secondary GB dislocations can have an additional and, in some cases, even a much stronger effect on GB segregation than defect-free GBs. Using nanoscale correlative tomography combining crystallography and chemical analysis, we quantified the relationship between secondary GB dislocations and their segregation energy spectra for a model Fe-W alloy. This discovery unlocks design opportunities for advanced materials, leveraging the additional degrees of freedom provided by topologically-necessary secondary GB dislocations to modulate segregation.

Nature CommunicationsVol. 16(1)
Université Claude Bernard Lyon 1 (FR), Centre National de la Recherche Scientifique (FR), Max-Planck-Institut für Nachhaltige Materialien (DE), Matériaux Ingénierie et Science (FR), Imperial College London (GB), Institut National des Sciences Appliquées de Lyon (FR), Université Grenoble Alpes (FR)
Deutsche Forschungsgemeinschaft
Openalex Percentile: Top 12%
Advanced Materials Characterization Techniques
2.70
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