Anisotropy of Minority Charge Carrier Concentration in the MOSFET Undergate Region

The paper considers the possibility of reducing nonlinear distortions of the active region of the current-voltage characteristic of a MOSFET by creating anisotropy in the silicon undergate region. The simulation of the technological process for creating such a region by ion implantation of boron with a dose of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>. Electron distributions in the channel and their change depending on the depth are obtained. In the operating mode, the anisotropy region narrows the conductive channel to several nanometers, which reduces the flowing current, at the same time complicates the process of electron injection with a further increase in the drain-source voltage, which increases the stability of the current-voltage characteristic in the active region.