New 400 V SiC MOSFET and its use in Multi-Level Applications

With the introduction of the first ever 400 V SiC MOSFET technology, a gap which previously existed in the voltage range between 200 V medium-voltage MOSFET and 600 V super-junction MOSFET is closed. The new technology offers low switching losses and low on-state resistance and represents a perfect fit for 2-level topologies in 288 VDC systems or 3-level topologies working from 230 V AC to 350 VAC or 400 VDC to 550 VDC input voltages. The technology concept is briefly introduced. The expected efficiency and power density gains are verified by measurements in an appropriate test board representing a 2.5 kW 3-level PFC and are compared with the results of a common 2-level totem-pole PFC using a 650 V SiC MOSFET, as well as a classic boost PFC solution.