Method for Improving the Performance of Operational Amplifier with HA2700 Microchip Architecture

A circuit technique for increasing the maximum output voltage slew rate (SR) of an integrated operational amplifier (OpAmp) with the HA2700 microchip architecture based on the modernization of the input differential stage (DS) is considered. An OpAmp architecture is proposed in which the influence of parasitic capacitances of DS reference current sources and capacitances on the transistor substrate on the SR is minimized. This allows the use of micron technological processes in the fabrication of CBJT OpAmps, which are widely used to improve the radiation resistance of microchips. Computer simulation of the proposed OpAmp is performed, which shows that the SR of the new circuit differs from the SR of the well-known serial OpAmp by more than 40 times and reaches values of about 800 V/µs at the emitter current of the input transistors of the DC in the range of up to 80-100 μA. The developed OpAmp is recommended for practical use in discrete-to-analog filters on switched capacitors.

Authors

Institutions

Publication Details

Published
2024-10-17
DOI
https://doi.org/10.1109/eexpolytech62224.2024.10755787
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Method for Improving the Performance of Operational Amplifier with HA2700 Microchip Architecture

Dmitry V. Kuznetsov, Alexey E. Titov, Nikolay N. Prokopenko, Marsel A. Sergeenko
Advancements in Semiconductor Devices and Circuit Design
article

Method for Improving the Performance of Operational Amplifier with HA2700 Microchip Architecture

Dmitry V. Kuznetsov, Alexey E. Titov, Nikolay N. Prokopenko, Marsel A. Sergeenko
article en

Abstract

A circuit technique for increasing the maximum output voltage slew rate (SR) of an integrated operational amplifier (OpAmp) with the HA2700 microchip architecture based on the modernization of the input differential stage (DS) is considered. An OpAmp architecture is proposed in which the influence of parasitic capacitances of DS reference current sources and capacitances on the transistor substrate on the SR is minimized. This allows the use of micron technological processes in the fabrication of CBJT OpAmps, which are widely used to improve the radiation resistance of microchips. Computer simulation of the proposed OpAmp is performed, which shows that the SR of the new circuit differs from the SR of the well-known serial OpAmp by more than 40 times and reaches values of about 800 V/µs at the emitter current of the input transistors of the DC in the range of up to 80-100 μA. The developed OpAmp is recommended for practical use in discrete-to-analog filters on switched capacitors.

Southern Federal University (RU), Don State Technical University (RU)
Russian Science Foundation
Affordable and clean energy
Openalex Percentile: Top 81%
Advancements in Semiconductor Devices and Circuit Design
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Method for Improving the Performance of Operational Amplifier with HA2700 Microchip Architecture — Dmitry V. Kuznetsov, Alexey E. Titov, et al. · (2024) | TGRS Research Map | TGRS