Experimental Evaluation of a Gate-Step-Response Method for Device Identification used in Self-Configurable Gate-Drive Units

The semiconductor industry plays a critical role in numerous sectors, yet faces vulnerability in its supply chains. The recent global semiconductor shortage highlighted the risks of relying on a single supplier. To mitigate this, companies adopt dualsourcing strategies, but power devices like silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) pose challenges due to manufacturing nuances. Configurable gate-drive units (GDUs) offer flexibility but often require external input for device recognition. This paper introduces a method to achieve a self-configurable gate-drive unit based on measuring the gate step-response for power device identification. The proposed method enhances safety, ensures seamless integration, and offers adaptability in full-bridge or multi-phase systems. Experimental results demonstrate component uniformity, emphasize the importance of interval selection, and showcase the impact of external gate resistors on rise and fall times. Estimations of input capacitance using different methods highlight their effectiveness in distinguishing among devices. The practical implementation of the proposed method contributes to the efficiency, reliability, and cost-effectiveness of self-configurable GDUs.