Anderson disorder related p-type conductivity and metal-insulator transition in β-Ga2O3
The p -type doping is one of the main challenges of the emerging semiconductor β- Ga 2 O 3 technology. Phosphorus (P) implantation has been recently reported as a novel route to achieve p -type conduction on Ga 2 O 3 at room temperature. Here, P-implanted epilayers, grown onto c -plane sapphire revealed a pseudo-metallic behavior ( ρ = 1.3–0.3 Ω cm) in the 300–600 K range with a hole carrier concentration of p ⁓ 4–6 × 10 18 cm −3 and hole mobility of μ = 1.2–2.1 cm 2 /(V·s). At sufficiently low temperature, a metal-insulator transition arises together with an increase in the positive magnetoresistance, reaching up to 200 % (9 T) large positive magneto resistance effect at 2 K. It is suggested that an Anderson delocalization model explains the room temperature conduction, and the transition to an insulator state caused by random variation of potential related to the incorporated phosphorous in Ga 2 O 3 . We believe that the lack of shallow acceptors can be mitigated by promoting Anderson disorder through the incorporation of a high level of acceptor impurities.
Authors
- Amiran Bibilashvili (ORCID: https://orcid.org/0000-0002-8153-4498)
- Xin-Ying Tsai
- Fu‐Gow Tarntair
- Sang‐Mo Koo (ORCID: https://orcid.org/0000-0002-9827-9219)
- E. Chikoidze (ORCID: https://orcid.org/0000-0002-6566-4639)
- Amador Pérez‐Tomás (ORCID: https://orcid.org/0000-0002-0551-3142)
- Zurab Kushitashvili (ORCID: https://orcid.org/0000-0001-7140-3438)
- Ray‐Hua Horng (ORCID: https://orcid.org/0000-0002-1160-6775)
- Se-Rim Park (ORCID: https://orcid.org/0009-0006-4556-2615)
- Tamar Tchelidze
- Yves Dumont (ORCID: https://orcid.org/0000-0002-0739-428X)
- Zeyu Chi (ORCID: https://orcid.org/0000-0003-1391-527X)
- J.‐M. Chauveau (ORCID: https://orcid.org/0000-0002-6860-7744)
- Gérard Guillot
- Luka Burdiladze
Institutions
- Université Claude Bernard Lyon 1 (FR)
- Tbilisi State University (GE)
- Centre National de la Recherche Scientifique (FR)
- National Yang Ming Chiao Tung University (TW)
- Kwangwoon University (KR)
- Université de Versailles Saint-Quentin-en-Yvelines (FR)
- Université Paris-Saclay (FR)
- Institut des Nanotechnologies de Lyon (FR)
- Institut Català de Nanociència i Nanotecnologia (ES)
- Groupe d’Étude de la Matière Condensée (FR)
- Institut de Microelectrònica de Barcelona (ES)
- Institut National des Sciences Appliquées de Lyon (FR)
Publication Details
- Journal
- Materials Today Physics
- Published
- 2024-11-20
- DOI
- https://doi.org/10.1016/j.mtphys.2024.101602
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- National Science Foundation
- Agence Nationale de la Recherche
- Centre National de la Recherche Scientifique
- Shota Rustaveli National Science Foundation
- Sorbonne Université
- National Science and Technology Council
- Agencia Estatal de Investigación