Understanding Gate-Source Oscillations and Application of Low Dead Times in SiC Power Modules

Technological advantages of silicon carbide (SiC) power modules compared to silicon devices enable higher efficiency in various applications. To utilize these benefits high switching transients are mandatory in order to reduce dynamic losses. However, constraints like drain-source and gate-source voltage may limit switching speed. This paper gives insight and guidance on how to assess the gate-source voltage regarding overshoots. It is explained how short dead times lower the voltage overshoot on the passive switch and the potential in switching loss decrease is evaluated. Understanding and application of both topics allows a more efficient usage of power modules.