Damage Accumulation in Alpha Gallium Oxide during Sequential keV Light Ion Implantations
We present the results of investigation of radiation damage accumulation in α-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> during sequential co-implantation with fluorine and phosphorous ions having different energies. It is found that both the amount and depth distribution of the resulting damage depend on the sequence of the implants. The mechanism of such non-commutativity is discussed in the framework of possible chemical effects.
Authors
- K. V. Karabeshkin (ORCID: https://orcid.org/0000-0003-1770-1877)
- А.И. Титов (ORCID: https://orcid.org/0000-0003-4933-9534)
- R Kleimanov (ORCID: https://orcid.org/0000-0003-3485-7961)
- A. N. Klevtsov (ORCID: https://orcid.org/0009-0004-6988-9685)
- Alexander Azarov (ORCID: https://orcid.org/0000-0003-0602-9624)
- P. A. Karaseov (ORCID: https://orcid.org/0000-0003-2511-0188)
Institutions
- University of Oslo (NO)
- Peter the Great St. Petersburg Polytechnic University (RU)
Publication Details
- Published
- 2024-10-17
- DOI
- https://doi.org/10.1109/eexpolytech62224.2024.10755933
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation