Cold Sintering Process for Fabrication of High Voltage Gradient ZnO Varistors
ZnO-based varistor ceramics exhibit exceptional nonlinear current-voltage (I-V) characteristics, rendering them suitable for application as surge suppressors in electronic circuits and overvoltage protectors in power systems. However, the conventional high-temperature sintering techniques face challenges in achieving fine-dense ZnO varistor ceramics with micro-nanometer grain sizes. In this study, we propose a novel strategy for producing high-density ZnO-based ceramics with controlled grain growth and customizable grain boundary structures. This is achieved through a low-temperature cold sintering process (CSP) utilizing a mixture of soluble metal salts (Bi, Co, Mn, etc.) and acetic acid as a transient liquid phase. Subsequently, the densification, microstructure, and electrical performance of the cold-sintered ZnO-based varistor ceramics were further enhanced by low-temperature annealing treatment at approximately 850°C for 3 h. The results demonstrate that following the annealing treatment, the relative densification of the ZnO-based varistor ceramics reaches up to ~99%. Additionally, the annealed varistor ceramics exhibit a high voltage gradient of ~2127.13 V/mm, with a high nonlinear coefficient of ~88.35, and a low leakage current density of below 0.03 μA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The impressive I-<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> properties can be attributed to the small grain size and the presence of Bi-rich high-resistance grain boundaries between ZnO grains induced by soluble metal salts during CSP, thus outperforming commercially available varistor ceramics. This work presents a promising approach for producing high voltage gradient ZnO varistors and offers valuable insights into designing ZnO varistors with tailored characteristics by manipulating microstructure via the CSP.
Authors
- Ruijin Liao (ORCID: https://orcid.org/0000-0002-3884-8782)
- Xuetong Zhao (ORCID: https://orcid.org/0000-0002-1510-5791)
- Chengjun Ren (ORCID: https://orcid.org/0000-0002-0008-5767)
- Shenglin Kang
- Yongjian Xiao (ORCID: https://orcid.org/0000-0001-8555-9361)
- Qi Wang (ORCID: https://orcid.org/0000-0002-1556-2167)
Institutions
- Chongqing University (CN)
- State Grid Corporation of China (China) (CN)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/icpadm61663.2024.10750691
- Citations
- 1
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.12