Comparison of Structure, Transport Properties and Thermoelectric Power Efficiency of Thin CrSi and CoSi Films on Si(111) and Si(100) Substrates
The paper compares the formation conditions, crystal structure, conductivity, and thermoelectric properties of thin CrSi and CoSi films on silicon substrates with (111) and (100) orientations. It is found that, despite the insufficiently good conductivity, the films have a noticeable Seebeck coefficient (up to 70 μV/K) in the temperature range of 200-450 K: positive for CrSi and negative for CoSi. The maximum power factor is estimated at 2 to 3 mW/(m2×K). For CoSi, first-principles calculations of the phonon structure and lattice thermal conductivity are performed, including in the form of nanowires. Estimates are made for the achievable dimensionless thermoelectric figure of merit of CoSi thin films: ZT=0.40–0.50 T=200-450 K.
Authors
- S. A. Dotsenko (ORCID: https://orcid.org/0000-0002-0052-7465)
- Oleg Goroshko (ORCID: https://orcid.org/0000-0003-2090-9062)
- A. M. Maslov (ORCID: https://orcid.org/0000-0002-8656-3167)
- Oleg V. Kropachev (ORCID: https://orcid.org/0000-0003-4300-0070)
- S. A. Balagan (ORCID: https://orcid.org/0000-0003-1634-7060)
- Konstantin N. Galkin (ORCID: https://orcid.org/0000-0001-5386-1013)
- N. G. Galkin (ORCID: https://orcid.org/0000-0003-4127-2988)
- Evgenii Yu. Subbotin (ORCID: https://orcid.org/0000-0001-9531-3867)
- D. L. Goroshko (ORCID: https://orcid.org/0000-0002-1250-3372)
- Igor M. Chernev (ORCID: https://orcid.org/0000-0002-8726-9832)
- Dmitrii A. Khoroshilov
Institutions
- Institute of Automation and Control Processes (RU)
Publication Details
- Published
- 2024-10-17
- DOI
- https://doi.org/10.1109/eexpolytech62224.2024.10755921
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation