Active Short-Circuit Investigation of SiC MOSFETs

In this paper, a new approach is presented to investigate the active short-circuit capability of SiC MOSFETs. This approach is utilized for 1200 V SiC MOSFET in a TO-247-4 package. It was found out that SiC MOSFETs can withstand higher current amplitudes during active short-circuit in the third quadrant compared to the first quadrant. The JFET-effect as well as the saturation current and its temperature dependence are decisive for this. The obtained findings are intended to contribute to the establishment of qualification standards for SiC MOSFETs with respect to their active short-circuit capability.