Analysing the Influence of a High Number of Short Circuit Events on the Device Parameters of 1200V SiC-MOSFETs

This paper investigates the effect of repeated type I short-circuit (SC) events on device parameters of modern 1200V silicon carbide (SiC) MOSFETs. Therefore, tests have been performed with a constant short-circuit time, DC-link voltage as well as a controlled case temperature of 60° C. Different SiC MOSFETs in TO263-7 package with similar on-state resistance of different manufacturers with both trench and planar structure have been analysed. In order to determine possible degradation, the threshold and the breakdown voltage are particular interesting parameters as well as the behaviour of the components in the first and third quadrant operation.