Maximizing Efficiency while Managing Semiconductor Costs: Wide Bandgap Semiconductor Integration in T-Type Converters for 3-Phase AC-DC Applications

This paper explores different configurations of the T-Type converter for 3-phase AC-DC applications, with a focus on improving partial load efficiency while managing semiconductor costs. The key aspect is the integration of wide-bandgap semiconductors, such as SiC MOSFETs and bidirectional GaN HEMTs, alongside silicon IGBTs in a T-Type converter. The maximum output power and efficiency of these variants is determined by the use of a simulation model. The findings reveal that sizing the SiC T-branch only for small currents allows for high efficiency without a significant increase in semiconductor cost. The utilization of bidirectional GaN HEMTs in the T-branch is a promising solution to enhance both efficiency and cost-effectiveness, surpassing conventional silicon-based converters in both aspects.

Authors

Institutions

Publication Details

Published
2024-09-02
DOI
https://doi.org/10.1109/ecceeurope62508.2024.10751829
Citations
3
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.63
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Maximizing Efficiency while Managing Semiconductor Costs: Wide Bandgap Semiconductor Integration in T-Type Converters for 3-Phase AC-DC Applications

Markus Pfeifer, Sebastian Nielebock, Mark‐M. Bakran, Sebastian Gick
3 citations
Silicon Carbide Semiconductor Technologies
0.63
article

Maximizing Efficiency while Managing Semiconductor Costs: Wide Bandgap Semiconductor Integration in T-Type Converters for 3-Phase AC-DC Applications

Markus Pfeifer, Sebastian Nielebock, Mark‐M. Bakran, Sebastian Gick
article en
3 citations

Abstract

This paper explores different configurations of the T-Type converter for 3-phase AC-DC applications, with a focus on improving partial load efficiency while managing semiconductor costs. The key aspect is the integration of wide-bandgap semiconductors, such as SiC MOSFETs and bidirectional GaN HEMTs, alongside silicon IGBTs in a T-Type converter. The maximum output power and efficiency of these variants is determined by the use of a simulation model. The findings reveal that sizing the SiC T-branch only for small currents allows for high efficiency without a significant increase in semiconductor cost. The utilization of bidirectional GaN HEMTs in the T-branch is a promising solution to enhance both efficiency and cost-effectiveness, surpassing conventional silicon-based converters in both aspects.

Siemens (Germany) (DE), University of Bayreuth (DE)
Affordable and clean energy
Openalex Percentile: Top 30%
Silicon Carbide Semiconductor Technologies
0.63
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Maximizing Efficiency while Managing Semiconductor Costs: Wide Bandgap Semiconductor Integration in T-Type Converters for 3-Phase AC-DC Applications — Markus Pfeifer, Sebastian Nielebock, et al. · (2024) | TGRS Research Map | TGRS