Maximizing Efficiency while Managing Semiconductor Costs: Wide Bandgap Semiconductor Integration in T-Type Converters for 3-Phase AC-DC Applications
This paper explores different configurations of the T-Type converter for 3-phase AC-DC applications, with a focus on improving partial load efficiency while managing semiconductor costs. The key aspect is the integration of wide-bandgap semiconductors, such as SiC MOSFETs and bidirectional GaN HEMTs, alongside silicon IGBTs in a T-Type converter. The maximum output power and efficiency of these variants is determined by the use of a simulation model. The findings reveal that sizing the SiC T-branch only for small currents allows for high efficiency without a significant increase in semiconductor cost. The utilization of bidirectional GaN HEMTs in the T-branch is a promising solution to enhance both efficiency and cost-effectiveness, surpassing conventional silicon-based converters in both aspects.
Authors
- Markus Pfeifer (ORCID: https://orcid.org/0000-0002-2335-8860)
- Sebastian Nielebock
- Mark‐M. Bakran (ORCID: https://orcid.org/0000-0002-0622-5855)
- Sebastian Gick (ORCID: https://orcid.org/0009-0009-2333-2159)
Institutions
- Siemens (Germany) (DE)
- University of Bayreuth (DE)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/ecceeurope62508.2024.10751829
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63