Planar Micropillar Cavity Structure with Enhanced Power-Conversion Efficiency

We present the results on the modelling and fabrication of micropillar cavity structure with enhanced power-conversion efficiency. The use of Al0.2Ga0.8As/Al0.9Ga0.1As pairs in the mirrors of a micropillar cavity allows to increase the power-conversion efficiency at 130 K by more than 11 times compared to the cavity design with Al0.9Ga0.1As/GaAs mirrors. This microcavity structure was grown by molecular-beam epitaxy. The microcavity structure grown by molecular-beam epitaxy had the resonance energy of about 1.29 eV at the center of the epi-wafer, and the energy has been shifting by about 11 meV along the radius of 3-inch wafer. The root mean square of surface roughness was less than 0.4 nm.