Self-Assembled InGaAs Quantum Dots with Reduced Inhomogeneous Broadening
The results on fabrication by molecular-beam epitaxy of self-assembled InGaAs quantum dots using the Stranski–Krastanow growth mode are presented. Temperature study of photoluminescence spectra has shown that quantum dots assembled from the In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.45</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.55</inf>As layer have reduced inhomogeneous broadening compared to quantum dots formed from the InGaAs layer with a larger indium content.
Authors
- I. I. Novikov (ORCID: https://orcid.org/0000-0003-1983-0242)
- L. Ya. Karachinsky (ORCID: https://orcid.org/0000-0002-5634-8183)
- A. Yu. Egorov (ORCID: https://orcid.org/0000-0002-0789-4241)
- A. M. Nadtochiy (ORCID: https://orcid.org/0000-0003-0982-907X)
- A. V. Babichev (ORCID: https://orcid.org/0000-0002-3463-4744)
- A.S. Dragunova
- N. V. Kryzhanovskaya (ORCID: https://orcid.org/0000-0002-4945-9803)
- Denis S. Papylev (ORCID: https://orcid.org/0009-0001-3683-5558)
Institutions
- National Research University Higher School of Economics (RU)
- ITMO University (RU)
Publication Details
- Published
- 2024-10-17
- DOI
- https://doi.org/10.1109/eexpolytech62224.2024.10755942
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.34
Funders
- Russian Science Foundation