Control Method Comparison for the Parallel Hybrid Si IGBT/SiC MOSFET Converter

This paper investigates control strategies for the Parallel Hybrid Converter. The Parallel Hybrid Converter configuration consists of a dual-bridge architecture, comprising a Silicon IGBT bridge and a partially rated Silicon Carbide MOSFET bridge, interconnected through a shared DC bus. This topology presents a wide array of complex control scenarios that require more investigation. It is necessary to incorporate current limiting techniques to address current conduction issues in the SiC MOSFET bridge. Three distinct control methodologies for the Parallel Hybrid Converter are discussed and analysed: direct space vector control, fractional power processing with PID/PWM and long-horizon Finite-Control-Set Model Predictive Control. A comprehensive comparative assessment is demonstrated in the same simulation condition, covering various performance metrics, including the THD of the output current, the switching frequency of the Si IGBT converter, the effectiveness of current limiting for the SiC MOSFET converters, the performance of each control approach under dynamic conditions, including system faults and harmonic rejection. The long-horizon Finite-Control-Set Model Predictive Control is verified and substantially outperforms other two conventional control techniques.