Analytical Modeling of SiC Hard Switching Fault for Stray Voltage Capture Detection

In this work, an analytical model for one short circuit event, i.e., the Hard Switching Fault (HSF), is derived to further enhance the robustness of the Stray Voltage Capture (SVC) method. The derived model incorporates various parasitic elements. SiC device non-linear component modeling is first shown and used as a basis for the HSF model. Then, the model is linearized and the impact of each parasitic element is explored in the implementation of the SVC method. Experimental results on a 1.2 kV - 800 A SiC power module are shown to validate the analysis.