Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid
Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.
Authors
- Shigetaka Tomiya (ORCID: https://orcid.org/0000-0003-0377-9331)
- Kuniyuki Kakushima (ORCID: https://orcid.org/0000-0002-8527-1402)
- Iriya Muneta (ORCID: https://orcid.org/0000-0001-7620-4948)
- Hitoshi Wakabayashi (ORCID: https://orcid.org/0000-0001-5509-521X)
- Ryo Ono (ORCID: https://orcid.org/0009-0000-0960-2583)
- Shinya Imai (ORCID: https://orcid.org/0000-0002-1993-9910)
- Kazuo Tsutsui (ORCID: https://orcid.org/0000-0002-5472-5539)
- Tetsuya Tatsumi
Institutions
- Tokyo Institute of Technology (JP)
Publication Details
- Journal
- IEEE Journal of the Electron Devices Society
- Published
- 2024-11-20
- DOI
- https://doi.org/10.1109/jeds.2024.3502922
- Citations
- 2
- Primary Topic
- MXene and MAX Phase Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.23