Intrinsic Short-Circuit Current Limitation in Solid-State Applications with Series-Connected MOSFETs
This paper presents a basic concept for a MOSFET series connection optimised for solid-state applications, requiring only one gate driver and one isolated power supply. The turn-on and turn-off behaviours are analysed, and measurements show that an intrinsic short-circuit current limitation is realised that is robust to load voltage variations and can be adjusted by changing the gate voltage. Additionally, the series connection enhances robustness against semiconductor failure of the solid-state device.
Authors
- Karsten Handt
- Hauke Nannen (ORCID: https://orcid.org/0000-0001-8901-8642)
Institutions
- Siemens (Germany) (DE)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/ecceeurope62508.2024.10751963
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00