A High Coupling Coefficient and Symmetric Transformer Based on TSV
Transformers are the key passive devices in many radio frequency integrated circuit (RF IC) applications. In this article, a kind of ultrahigh coupling coefficient and symmetric transformer based on through-silicon via (TSV) is proposed. HFSS software is used to model and simulate the transformers with turn ratios of 1:1, 1:2, and 1:3, and the three structures are manufactured and measured. The measurement results show that the coupling coefficients of the three are 0.956, 0.971, and 0.954, and the areas are 0.007, 0.012, and 0.015 mm2. Compared with other literatures, it has the characteristics of high coupling and miniaturization.
Authors
- Xiangkun Yin (ORCID: https://orcid.org/0000-0003-2318-1257)
- Yuan Yang (ORCID: https://orcid.org/0000-0002-4225-5226)
- Fengjuan Wang (ORCID: https://orcid.org/0000-0001-9331-7936)
- Yue Deng (ORCID: https://orcid.org/0009-0007-6274-2762)
- Yan Li (ORCID: https://orcid.org/0000-0002-6093-3529)
- Ningmei Yu (ORCID: https://orcid.org/0000-0002-4219-8364)
Institutions
- Xidian University (CN)
- Xi'an University of Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Components Packaging and Manufacturing Technology
- Published
- 2024-11-20
- DOI
- https://doi.org/10.1109/tcpmt.2024.3503561
- Citations
- 24
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 5.01
Funders
- National Natural Science Foundation of China